YMP230N55 n-channe l enhancement mode power mosfet produ c t s u mm a ry b v d s s t y p . 55 v 2 m ? r ds(on) t y p . m a x . 3 m ? i d 230 a general description the YMP230N55 uses advanced trench technology and des i gn to pro v i de e x c e ll e nt r ds ( o n) w i t h l o w gate charge. t h is device is suita b le for us e in p w m, load s w it c h i n g a n d ge n eral p u r p o s e ap p licat i ons . features ? v d s = 55 v i d = 230 a @ v g s = 10 v r d s (on ) < 3 m ? @ v g s = 10 v ? spec i a l pr o c ess techn o l og y for h i gh esd cap a bi l i t y ? spec i a l de s ig n ed for c o n v ertors and p o w e r controls ? high den s i ty c e l l de s ign f o r ul tr a l o w r d s on ? f u l l y c ha r a c terized av a l a n che v o lta g e a nd curr e nt ? good stab i l i t y a n d uni f o rm i t y w i th h i gh e a s ? exc e l l ent p a cka g e for go o d heat dis s i p at i on application ? p o w e r s w it c h i n g ap p licat i on ? hard s w i t c h ed and h i gh f r e q uen c y cir c u i t s ? uninter r upt i b le p o w e r s u pp l y 100 % u is t es t e d ! t op v i e w sc h emat i c di ag ram package marking and ordering i n formation d e v i ce marking d e v i c e d e v ic e p a c k ag e reel size t a p e w i d t h qu a n t i ty YMP230N55 YMP230N55 to - - - t a bl e 1 . a b s olu te max i m u m rat ing s ( t a=25 ) parameter s y mbol v a lue unit drain- s our c e volta g e ( v g s = 0 v ? v d s 55 v g a t e -s ou rc e v o l t a g e (v d s = 0 v) v g s 25 v drain c u rr e nt (dc) at t c = 2 5 i d (dc ) 230 a drain c u rr e nt (dc) at t c = 100 i d (dc ) 170 a drain c u rr e nt-cont i nu o us@ current- p uls ed (n o t e 1 ) i dm ( p l u s e ) 900 a maximum p o w e r dissipation ( t c = 25 ) p d w derat i ng facto r 1.33 w / sin g le p u lse a v al a n che ene r g y ( n o t e 2 ) e a s 2000 mj operati n g jun c tion a n d sto r a g e t e mpera t ur e ran g e t j , t s tg - 55 t o 175 note s 1 . r ep e t i ti v e r a tin g : p u l s e w i dth limi t e d b y ma x i mum jun c ti o n t e mp e ra t u r e 2 . eas c o n d i t i o n ? tj= 2 5 , v d d = 28 v , v g=10 v ,l = 1 m h , r g =25 ? ; u??}g<<???;?zvp}|?r;p|z 1/6 to-220-3l -220-3l 300 free datasheet http://www.0pdf.com
table 2. thermal characteristic parameter s y mbol v a lue unit t hermal resis t anc e j unc t i o n - t o-ca s e ? note2) ? r thj c 0.75 / w table 3. electrical characteristics (ta=25 unl ess o t h er w i se no te d ) parameter s y mbol condition min t y p max u nit off characteristics drain- s our c e break d o w n v o l t age b v d s s v g s = 0 v i d = 25 0 a 55 v z e ro g a t e vol t age d r ain c u r r en t ( t c = 2 5 ) i d s s v d s = -24v,v g s =0v 1 a gate-body leakage current i d s s 10 a on characteristics (note 3) v g s = 25v,v d s = 0 v 1 00 gate t h resho l d volta g e v gs ( t h ) v d s = , i d = 25 0 a 2 - 4 v drain- s our c e o n-s t a t e resi s t ance r d s (on ) v g s = 10v, i d = 9 5 a 2 3 m
d y n a mic c h ar act e r istic s f o r w a r d t r an sc on d uc t an c e g fs v d s =2 5 v, i d = 60 a 106 s input ca p a cit a nce c ls s 73 6 0 p f o u t pu t ca p a ci t ance c os s 1680 p f rever s e t r ansfer capa c itan c e c rs s v d s = 30v,v g s = 0 v , f = 1 . 0 m h z 240 p f t o tal gate charge q g 160 nc gate-source c har g e q g s 35 nc gate-drain charge q g d v d s = 48v,i d = 95a, v g s = 10 v 42 nc s w itc h in g ti m es t u rn-on dela y t i me t d ( on ) 17 ns t u rn-on rise t ime t r 21 ns t u rn-off delay t i me t d ( o f f ) 72 ns t u rn-off fall t i me t f v d d = 30v,i d = 1 a, r l = 30
v g s = 10v,r g = 3
26 ns s ou r ce- drai n di od e c h ara c teristics source - d ra i n curren t (b od y d i ode) i s d 95 a f o r w a r d o n vo l t ag e ( n o t e 3 ) v s d t j = 2 5 , i s d = 20a,v g s = 0 v 0.8 1 . 3 v rever s e recove r y t i me (n o t e 1 ) t r r 74 ns rever s e rec o ve r y c ha r g e q r r t j = 2 5 , i f = 40a,di/dt = 100a / s 140 nc f o r w a r d t u r n - on t i m e t o n i n t rinsic t urn- o n t ime is ne g li g ible( t urn- o n is dom i na t ed b y l s + l d ) note s 3 . p u l s e t e s t: p u l s e w i d t h ? 3 0 0 s, d u t y c y c l e ? 2%, r g = 2 5
, s tart i n g tj=2 5 2/6 148 YMP230N55 u??}g<<???;?zvp}|?r;p|z 10v 33 37 78 r d =0.21
free datasheet http://www.0pdf.com
test ci r c uit 1 e a s te s t circuits 2 gate ch a rge test cir c uit: 3 s w itch time test circuit 3/6 YMP230N55 u??}g<<???;?zvp}|?r;p|z free datasheet http://www.0pdf.com
typical characteristics 4/6 d r ai n curr e nt i d - d r a i n c u r r ent ( a ) t j - junc t i o n te m perature ( c) safe oper a t i o n are a ther m a l transient im p edance i d - dra i n c u rre n t ( a ) no r m al i ze d e f f ec t i ve t r a n s i e n t v d s - dr a i n - source v o ltage (v) squ are w ave p u l s e d u rat io n (sec) YMP230N55 u??}g<<???;?zvp}|?r;p|z 25 50 75 100 125 150 175 200 225 250 275 free datasheet http://www.0pdf.com
t y pic a l ch a ra c t er i sti c s (c o n t.) 5/6 o u t put cha r ac t er i s t i c s dr a i n-source o n re s i st a n ce i d - d r a i n c u rr e n t ( a ) r d s ( o n ) - o n re s i stance (m ? ) v d s - dr a i n - sou rce v o l ta g e ( v ) i d - dr a i n curren t ( a ) drain-source o n r e s i s t ance ga t e t h r es h o l d vo l t a g e rds(o n ) - on - r es i s t ance ( m r ) n o r m a l ized thresh o l d v l otage vg s - g a t e - so u r ce v o l t ag e (v) tj - junc t i o n te m perature ( c ) YMP230N55 u??}g<<???;?zvp}|?r;p|z 25 50 75 100 125 150 175 200 225 1 2 3 4 5 6 7 1 2 3 4 5 6 free datasheet http://www.0pdf.com
t y pic a l ch a ra c t er i sti c s (c o n t.) 6/6 drain-source o n r e s i stan c e s ou rce-dra i n d i od e f o r w ar d no rm al i z e d o n res i s t an ce i s - sou r c e c u rrent ( a ) t j - juncti o n tempera t ure ( c) v s d - s o u r c e - d r a i n v o l t a g e ( v ) ca p a c i ta n ce ga t e c h ar g e c - ca p ac it a n ce (pf) v g s - g a t e -sou r ce vo l t a g e ( v ) v d s - d r a i n - sourc e v o l t age (v) q g - ga t e c h arge (nc ) r o n @ t=25 o c : 2 . 8 m ? YMP230N55 u??}g<<???;?zvp}|?r;p|z 200 free datasheet http://www.0pdf.com
|
